
Chip
We mainly provide products and technical services for enterprises in the fields of national defense research institutes, electric power, automotive, industrial control, new energy, rail transit, Internet of Things and so on. At present, the dominant brands are: st; ti; nxp; adi; on; infineon; xilinx; Fuji; vishay; microchip; Broadcom; intel; altrea etc.
At present, it has a perfect agent promotion service system, and the agent brands are: Huatai Semiconductor, Zhide Electronics, Jianghao Electronics, Jita Semiconductor, basic semiconductor, Imicro Semiconductor, Bosch, National Technology, Taiwan Luyuan and other brands, mainly: Power IC, MCU, IGBT, MOS, TVS, resistance capacitance and other products, mainly for new energy and automotive electronics, power supply and power system solutions.

IGBT
650V, 1200V super junction technology, low switching loss, thin chip, high working frequency; Mixed seal half/full current SiC SBD, higher switching frequency and efficiency; TO-247-3 or TO-247P-3 standard package, TO-247-4L package Kelvin structure efficiency is better.

Industrial module, vehicle scale block
650V 1200V IGBT 1200V SICMOS low stray inductance, flexible design for photovoltaic and industrial power markets; Three-level, half-bridge,PIM topology; The current ranges from 10A to 1000A.650V 750V IGBT 1200V SICMOS is flexible to customize different vehicle gauge products for the needs of new energy vehicle customers; Single-tube, half-bridge and three-phase bridge topologies; Current 300A-900A.

SiC SBD
650V, 1200V, 1700V near zero recovery loss, can achieve high power density and high efficiency; MPS structure, with excellent surge resistance; Using 6 "wafer, lead time 6-8 weeks.

Diode
Switching diode; Schottky diode; Voltage regulator diode; TVS diode; PIN secondary tube; High-power TVS; Thyristor surge protector; The rectifier bridge.

SiC MOSFET
650V,1200V,1700V · 15mohm-1ohm with high reliability and high efficiency Kelvin structure package; Using 6 "wafers, the cost is better; Suitable for new energy vehicles, charging piles, energy storage DC/DC and other applications.

Power IC products
LDO; Three-terminal regulated integrated circuit; Comparator; Charge management IC; Operation amplifier; Lithium protection IC;DC-DC; Darlington array; Voltage detection; Reset the IC; Reference power supply.